Paper Title
Design of a low-energy 7T SRAM cell with Schmitt trigger for IoT reliability
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Registration ID: IJNRD_307950
Published ID: IJNRD2506318
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Keywords
7T SRAM, Static RAM (SRAM), SRAM cell, Cross-coupled inverters, Access transistors, Write assist transis tors, Read stability.
Abstract
This paper discusses the design and evaluation of a new seven-transistor (7T) static random-access memory (SRAM) cell tailored for dependable performance in resource-limited Internet of Things (IoT) settings. The design utilizes a Schmitt trigger configuration to boost noise immunity and enhance sta bility against variations in manufacturing processes and supply voltage, which are crucial for the reliability of IoT devices. Unlike traditional 7T SRAM cells, our design significantly mitigates the effects of these variations, resulting in a more dependable memory cell even in challenging operating environments. The key innovations involve a well-optimized strategy for transistor sizing and a unique bias circuit integrated within the Schmitt trigger, designed to lower power usage without sacrificing stability. Comprehensive simulations carried out with a 28nm CMOSprocess reveal a notable enhancement in stability margin, demonstrated by a 35% increase in noise margin compared to a typical 7T SRAM cell. Additionally, our design realizes a 20% decrease in average power consumption while preserving similar read and write speeds. These advancements stem from the diminished switching activity in the Schmitt trigger and the optimized sizing of transistors, which helps reduce leakage current. The proposed 7T SRAM cell is ideally suited for low power IoT applications that demand high reliability and robust performance in difficult operating scenarios. The improved sta bility and lower power usage lead to longer battery life and enhanced overall system performance in resource-constrained IoT implementations.
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How To Cite (APA)
M. Srikanth & Siva chakra Avinash (June-2025). Design of a low-energy 7T SRAM cell with Schmitt trigger for IoT reliability. INTERNATIONAL JOURNAL OF NOVEL RESEARCH AND DEVELOPMENT, 10(6), d155-d158. https://ijnrd.org/papers/IJNRD2506318.pdf
Issue
Volume 10 Issue 6, June-2025
Pages : d155-d158
Other Publication Details
Paper Reg. ID: IJNRD_307950
Published Paper Id: IJNRD2506318
Research Area: Science and Technology
Author Type: Indian Author
Country: velangi, Andhra Pradesh, India
Published Paper PDF: https://ijnrd.org/papers/IJNRD2506318.pdf
Published Paper URL: https://ijnrd.org/viewpaperforall?paper=IJNRD2506318
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