Paper Title
EV Charger using SiC
Article Identifiers
Authors
Rushiraj Kapase , Amisha Mulla , Jasmin Mulani , Rupesh Jadhav
Keywords
Replacing IGBT Mosfet with Silicon Carbide Mosfet
Abstract
SiC MOSFETs and IGBTs are semiconductors developed for high temp and frequency applications in electrical systems. SiC MOSFETs have higher productivity, power density, and cooling capabilities, making them ideal for use in EVs. However, their adoption in the automotive industry has been limited due to challenges such as EMI, reliability issues, and cooling difficulties. The paper examines SiC MOSFET benefits in various EV applications and explores future innovations to improve their reliability and enable higher switching frequencies.
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How To Cite (APA)
Rushiraj Kapase, Amisha Mulla, Jasmin Mulani, & Rupesh Jadhav (August-2024). EV Charger using SiC. INTERNATIONAL JOURNAL OF NOVEL RESEARCH AND DEVELOPMENT, 9(8), c527-c531. https://ijnrd.org/papers/IJNRD2408257.pdf
Issue
Volume 9 Issue 8, August-2024
Pages : c527-c531
Other Publication Details
Paper Reg. ID: IJNRD_221129
Published Paper Id: IJNRD2408257
Downloads: 000121990
Research Area: Engineering
Country: Kolhapur, Maharastra, India
Published Paper PDF: https://ijnrd.org/papers/IJNRD2408257.pdf
Published Paper URL: https://ijnrd.org/viewpaperforall?paper=IJNRD2408257
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Journal Name: INTERNATIONAL JOURNAL OF NOVEL RESEARCH AND DEVELOPMENT(IJNRD)
ISSN: 2456-4184 | IMPACT FACTOR: 8.76 Calculated By Google Scholar | ESTD YEAR: 2016
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This work is licensed under a Creative Commons Attribution 4.0 International License and The Open Definition
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