Paper Title
Hafnium (Hf) doped BaTiO3: A study of structural and electrical properties for device application feasibility
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Keywords
Synthesis; ferroelectrics; dielectric properties; crystal structure; Impedance
Abstract
Owing to its excellent dielectric and ferroelectric properties, BaTiO3 is one of the most extensively studied ferroelectric materials and is currently utilized in a wide variety of fields including multilayer capacitors, transducers, actuators, electro-optical devices, electromechanical devices, dynamic random-access memory, field-effect transistors, and thermistors, among others. Taking into the consideration these applications, Hf has been selected as the substituent for BaTiO3 (BaTi0.9Hf0.1O3) to modify its physical properties. Hereby, we report synthesis of BaTi0.9Hf0.1O3 using solid state route and investigated its crystallization via XRD and also emphasized on its dielectric and impedance characteristics. XRD analysis reveals tetragonal crystal structure of the synthesized sample. Dielectric measurements as a function of frequency infer the sample to inherit higher dielectric permittivity with relatively. Conduction mechanism was investigated using electric modulus and impedance studies. Impedance study reveals non-ideal Debye-like behavior of the ceramic.
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How To Cite (APA)
Arpita Patel & Rajesh Kumar Katare (April-2024). Hafnium (Hf) doped BaTiO3: A study of structural and electrical properties for device application feasibility. INTERNATIONAL JOURNAL OF NOVEL RESEARCH AND DEVELOPMENT, 9(4), b604-b616. https://ijnrd.org/papers/IJNRD2404180.pdf
Issue
Volume 9 Issue 4, April-2024
Pages : b604-b616
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Paper Reg. ID: IJNRD_217535
Published Paper Id: IJNRD2404180
Downloads: 000121998
Research Area: Physics
Author Type: Indian Author
Country: Indore, Madhya Pradesh, India
Published Paper PDF: https://ijnrd.org/papers/IJNRD2404180.pdf
Published Paper URL: https://ijnrd.org/viewpaperforall?paper=IJNRD2404180
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