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Paper Title

Hafnium (Hf) doped BaTiO3: A study of structural and electrical properties for device application feasibility

Article Identifiers

Registration ID: IJNRD_217535

Published ID: IJNRD2404180

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Keywords

Synthesis; ferroelectrics; dielectric properties; crystal structure; Impedance

Abstract

Owing to its excellent dielectric and ferroelectric properties, BaTiO3 is one of the most extensively studied ferroelectric materials and is currently utilized in a wide variety of fields including multilayer capacitors, transducers, actuators, electro-optical devices, electromechanical devices, dynamic random-access memory, field-effect transistors, and thermistors, among others. Taking into the consideration these applications, Hf has been selected as the substituent for BaTiO3 (BaTi0.9Hf0.1O3) to modify its physical properties. Hereby, we report synthesis of BaTi0.9Hf0.1O3 using solid state route and investigated its crystallization via XRD and also emphasized on its dielectric and impedance characteristics. XRD analysis reveals tetragonal crystal structure of the synthesized sample. Dielectric measurements as a function of frequency infer the sample to inherit higher dielectric permittivity with relatively. Conduction mechanism was investigated using electric modulus and impedance studies. Impedance study reveals non-ideal Debye-like behavior of the ceramic.

How To Cite (APA)

Arpita Patel & Rajesh Kumar Katare (April-2024). Hafnium (Hf) doped BaTiO3: A study of structural and electrical properties for device application feasibility. INTERNATIONAL JOURNAL OF NOVEL RESEARCH AND DEVELOPMENT, 9(4), b604-b616. https://ijnrd.org/papers/IJNRD2404180.pdf

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Other Publication Details

Paper Reg. ID: IJNRD_217535

Published Paper Id: IJNRD2404180

Downloads: 000121998

Research Area: Physics

Author Type: Indian Author

Country: Indore, Madhya Pradesh, India

Published Paper PDF: https://ijnrd.org/papers/IJNRD2404180.pdf

Published Paper URL: https://ijnrd.org/viewpaperforall?paper=IJNRD2404180

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Call For Paper - Volume 10 | Issue 11 | November 2025

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