Paper Title
DESIGN AND COMPARITIVE ANALYSIS OF BINARY AND TERNARY SRAM CELL
Article Identifiers
Authors
S. Vardhan Kumar , A. Nandini , A. Dhakshayini , Ch. Kavya , T. Venkata Lakshmi
Keywords
Binary SRAMs, Ternary SRAMs, Power dissipation, Delay, Area, Average Power,
Abstract
One of the biggest problems in portable applications, which are always in demand and include laptops, mobile phones, etc., is a low power circuit. Static Random Memory (SRAM) consumes a sizable portion of a system-on-a-chip (Soc) and considerably adds to the chip's overall power consumption, which is why efforts are made to develop low power Recurrently, there is a demand for the design of high performance and low-power memory circuits. Both high-performance processors and portable handheld devices require. SRAM as a key component. With ternary inverters and inverters, we are creating SRAM. cells. The binary number system's fundamental unit is 2. (0,1). The base number for the ternary numeral system is 3. (0,1 and 2). In the proposed project, binary and ternary SRAMs both from different cells will be compared, and performance traits such. propagation delay, power dissipation, as well as energy delay product will be monitored and determined.
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How To Cite
"DESIGN AND COMPARITIVE ANALYSIS OF BINARY AND TERNARY SRAM CELL", IJNRD - INTERNATIONAL JOURNAL OF NOVEL RESEARCH AND DEVELOPMENT (www.IJNRD.org), ISSN:2456-4184, Vol.8, Issue 4, page no.c502-c505, April-2023, Available :https://ijnrd.org/papers/IJNRD2304264.pdf
Issue
Volume 8 Issue 4, April-2023
Pages : c502-c505
Other Publication Details
Paper Reg. ID: IJNRD_191104
Published Paper Id: IJNRD2304264
Downloads: 000121128
Research Area: Engineering
Country: Krishna District, Andhra Pradesh, India
Published Paper PDF: https://ijnrd.org/papers/IJNRD2304264.pdf
Published Paper URL: https://ijnrd.org/viewpaperforall?paper=IJNRD2304264
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Journal Name: INTERNATIONAL JOURNAL OF NOVEL RESEARCH AND DEVELOPMENT(IJNRD)
ISSN: 2456-4184 | IMPACT FACTOR: 8.76 Calculated By Google Scholar | ESTD YEAR: 2016
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