STUDY OF INTEGRATED CMOS TRANSMIT-RECEIVE SWITCH AND FORMULATION OF HIGH FREQUENCY SPIRAL INDUCTOR MODEL

Registration ID: IJNRD_188679

Published ID: IJNRD2303147

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JAWED AKHTER , DR. K. B. SINGH , PROF. SURENDRA ROY

RF Switch, MOSFET, Spiral Inductor.

In this paper, we report on study of formulation of high frequency spiral inductor model. The spiral inductor is a critical component of this technique and a new compact model is proposed and verified by simulation and experiment. The spiral inductor model is incorporated in a tool which allows quick synthesis and analysis of spiral inductors across a variety of geometries and substrate doping. The enormous potential of the wireless communications market, the low level of integration of current transceiver implementations, and the rapid advance of low-cost silicon processing technologies, have contributed to the renewed interest in radiofrequency (RF) circuit design in the last decade. Although Metal-Oxide-Semiconductor-Field-Effect-Transistor (MOSFET) characteristics as a switch have dramatically improved over the years, its performance still falls short of the specifications needed in an RF transceiver [1].

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JAWED AKHTER, DR. K. B. SINGH, & PROF. SURENDRA ROY (March-2023). STUDY OF INTEGRATED CMOS TRANSMIT-RECEIVE SWITCH AND FORMULATION OF HIGH FREQUENCY SPIRAL INDUCTOR MODEL. INTERNATIONAL JOURNAL OF NOVEL RESEARCH AND DEVELOPMENT, 8(3), b415-b418. https://ijnrd.org/papers/IJNRD2303147.pdf

Volume 8 Issue 3, March-2023

Pages : b415-b418

Paper Reg. ID: IJNRD_188679

Published Paper Id: IJNRD2303147

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Research Area: Engineering

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Published Paper PDF: https://ijnrd.org/papers/IJNRD2303147.pdf

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Journal Name: INTERNATIONAL JOURNAL OF NOVEL RESEARCH AND DEVELOPMENT(IJNRD)

ISSN: 2456-4184 | IMPACT FACTOR: 8.76 Calculated By Google Scholar | ESTD YEAR: 2016

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