Paper Title

Multi Threshold CMOS Technique for designing of Low Power 4 Bit ALU and Combinational Circuits

Article Identifiers

Registration ID: IJNRD_182953

Published ID: IJNRD2209092

DOI: Click Here to Get

Authors

Prachi , Professor KL Purshnani

Keywords

CMOS, Delay, leakage, MTCMOS, Power Dissipation

Abstract

Exponential increase in the transistor density on a single substrate in an integrated circuit has paved the way for tremendous growth in the semiconductor industry. Very Large Scale Integration (VLSI) of these transistors on a single substrate boosts performance but also causes multiple issues related to delay and power consumption. It is important to boost performance but keep the trade-offs related to delay and power to a minimum. This has resulted in researchers moving towards low-power design techniques. Such techniques are different from conventional design techniques in such a way that power is consumed as and when needed. This helps in minimizing the total power consumed by any circuit. The work presented in this paper aims to present the capability of the multiple threshold complementary metal oxide semiconductor (MTCMOS) technique to achieve low power consumption with approximately the same delay time in a single circuit. Standard arithmetic and logic circuits have been simulated at the 180 nm technology node and critical parameters, namely power, and delay, have been calculated using the MTCMOS technique and compared with conventional CMOS design. It is shown that by using transistors of different thresholds (as in the MTCMOS technique) power consumption is significantly reduced.

How To Cite

"Multi Threshold CMOS Technique for designing of Low Power 4 Bit ALU and Combinational Circuits", IJNRD - INTERNATIONAL JOURNAL OF NOVEL RESEARCH AND DEVELOPMENT (www.IJNRD.org), ISSN:2456-4184, Vol.7, Issue 9, page no.789-795, September-2022, Available :https://ijnrd.org/papers/IJNRD2209092.pdf

Issue

Volume 7 Issue 9, September-2022

Pages : 789-795

Other Publication Details

Paper Reg. ID: IJNRD_182953

Published Paper Id: IJNRD2209092

Downloads: 000121159

Research Area: Electronics & Communication Engg. 

Country: GHAZIABAD, Uttar Pradesh, India

Published Paper PDF: https://ijnrd.org/papers/IJNRD2209092.pdf

Published Paper URL: https://ijnrd.org/viewpaperforall?paper=IJNRD2209092

About Publisher

Journal Name: INTERNATIONAL JOURNAL OF NOVEL RESEARCH AND DEVELOPMENT(IJNRD)

ISSN: 2456-4184 | IMPACT FACTOR: 8.76 Calculated By Google Scholar | ESTD YEAR: 2016

An International Scholarly Open Access Journal, Peer-Reviewed, Refereed Journal Impact Factor 8.76 Calculate by Google Scholar and Semantic Scholar | AI-Powered Research Tool, Multidisciplinary, Monthly, Multilanguage Journal Indexing in All Major Database & Metadata, Citation Generator

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Call For Paper - Volume 10 | Issue 8 | August 2025

IJNRD is Scholarly open access journals, Peer-reviewed, and Refereed Journals, High Impact factor 8.76 (Calculate by google scholar and Semantic Scholar | AI-Powered Research Tool), Multidisciplinary, Monthly, Indexing in all major database & Metadata, Citation Generator, Digital Object Identifier(DOI) with Open-Access Publications.

INTERNATIONAL JOURNAL OF NOVEL RESEARCH AND DEVELOPMENT (IJNRD) aims to explore advances in research pertaining to applied, theoretical and experimental Technological studies. The goal is to promote scientific information interchange between researchers, developers, engineers, students, and practitioners working in and around the world. IJNRD will provide an opportunity for practitioners and educators of engineering field to exchange research evidence, models of best practice and innovative ideas.

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