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INTERNATIONAL JOURNAL OF NOVEL RESEARCH AND DEVELOPMENT (IJNRD)
An International Open Access Journal |   ISSN: 2456-4184 |  IMPACT FACTOR: 5.57

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Paper Title: Design and Simulation of group III-V Gate All Around MOSFET
Authors Name: KOTHAPALLI SAI KIRAN , K.JEEVAN REDDY
Author Reg. ID:
IJNRD_160031
Published Paper Id: IJRTI1612007
Published In: Volume 1 Issue 3, December-2016
Abstract: As the channel length L is reduced to increase both the operation speed and the number of components per chip, the so-called short-channel effects arise. A short-channel effect is an effect whereby a MOSFET in which the channel length is the same order of magnitude as the depletion-layer widths of the source and drain junction, behaves differently from other MOSFETs. The short-channel effects are attributed to the limitation imposed on electron drift characteristics in the channel, the modification of the threshold voltage due to the shortening channel length. In this paper, a 3-D model of GATE ALL AROUND MOSFET with different gate materials of group III-V (InGaAs, GaAs, InP) is analyzed and comparative study of electrical characteristics of GATE ALL AROUND MOSFETs has been done
Keywords: GAA MOSFET, Short Channel Effect, Gate leakage, High-k materials, gate.
Cite Article: "Design and Simulation of group III-V Gate All Around MOSFET", International Journal of Novel Research and Development (www.ijnrd.org), ISSN:2456-4184, Vol.1, Issue 3, page no.42-46, December-2016, Available :http://www.ijnrd.org/papers/IJRTI1612007.pdf
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