UGC approved journal IJNRD Research Journal


INTERNATIONAL JOURNAL OF NOVEL RESEARCH AND DEVELOPMENT (IJNRD)
An International Open Access Journal |   ISSN: 2456-4184 |  IMPACT FACTOR: 5.57

Call For Paper

Issue: July 2020

Volume 5 | Issue 7

Impact Factor: 5.57

Submit Paper Online

Click Here For more Details

For Authors

Forms / Download

Editorial Board

Subscribe IJNRD

Facts & Figure

Impact Factor : 5.57

Issue per Year : 12

Volume Published : 5

Issue Published : 50

Article Submitted : 623

Article Published : 377

Total Authors : 985

Total Reviewer : 550

Total Pages : 79

Total Countries : 24

Visitor Counter


Indexing Partner

Published Paper Details
Paper Title: Design of Tunnel FET and its Performance Characteristics with various Materials
Authors Name: G. Sankaraiah , Ch. Sathyanarayana
Author Reg. ID:
IJNRD_160025
Published Paper Id: IJRTI1612004
Published In: Volume 1 Issue 3, December-2016
Abstract: In today’s technological environment, there is a huge demand for devices with low power and low cost storage space. Memories with low power are driving the entire VLSI industry as most of the devices work on remote power supply. Demand of low power becomes the key of VLSI designs rather than high speed, particularly in embedded SRAM’s and caches. The tunneling field effect transistor uses the quantum-mechanical generation of carriers by band-to-band tunneling. Tunneling-FET meets the challenges like low Subthreshold Swing(SS), low supply voltage and lower leakage currents. In particular, in this paper, we designed Tunnel FET with different materials such as Si and SiGe in different regions so as to produce low subthreshold swing, low leakage currents, low supply voltages and comparable IOFF and ION Idealized template devices were used to determine the device unidirectionality, which is inherent to TFETs. TFET with different material is used to investigate the VDD range, in which TFETS may be advantageous when compared to conventional MOSFET. Ambipolarity of TFET was analyzed. Realistic device templates extracted from experimental data of fabricated state-of-the-art Silicon n-TFET was used to assess the performance gap between the simulation of idealized TFETs and the best experimental implementations with different materials.
Keywords: Tunneling-FET(TFET), subthreshold swing (SS), unidirectionality, leakage current.
Cite Article: "Design of Tunnel FET and its Performance Characteristics with various Materials", International Journal of Novel Research and Development (www.ijnrd.org), ISSN:2456-4184, Vol.1, Issue 3, page no.27-31, December-2016, Available :http://www.ijnrd.org/papers/IJRTI1612004.pdf
Downloads: 000662
Share Article:

Click Here to Download This Article

Article Preview

ISSN Details

DOI (A digital object identifier)



Providing A digital object identifier by DOI

RMS

Conference Proposal

Latest News / Updates

Open Access License Policy

This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License

Creative Commons License This material is Open Knowledge This material is Open Data This material is Open Content

Important Details

Social Media

IJNRD